Abstract
Heavily P-doped Si layers have been grown at very low temperature (<600 °C) by rf plasma chemical vapor deposition. Films grown by vapor phase epitaxy (VPE) or solid phase epitaxy (SPE) are compared. By VPE growth, fully electrically activated films with a P concentration in excess of 1021 cm−3 and steep doping profiles (≤4 nm/dec) were obtained. SPE films are not fully activated and an anomalously fast P diffusion is observed during the crystallization at 600 °C. On the other hand, the Hall mobility of VPE films is significantly lower than that of SPE films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
