Abstract
The measured saturation current density J0e of heavily phosphorus-doped emitters of crystalline Si solar cells is analysed by means of sophisticated numerical device modelling. It is concluded that Shockley–Read–Hall (SRH) recombination exceeds Auger recombination significantly; it is caused by inactive phosphorus. This explains the large discrepancies between measured and simulated J0e values, observed persist-ently over the last two decades in industrially fabricated Si solar cells. As a consequence, the heavily phosphorus-diffused emitters still bear a significant potential to contribute to higher Si solar cell efficiency levels, if the amount of inactive phosphorus can be reduced. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
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