Abstract
Very heavily doped n-type polycrystalline CdTe films doped with metallic cadmium were prepared by using close-spaced vapor transport technique combined with free evaporation and the electrical, structural, and morphological properties were investigated. Cadmium was introduced as a dopant by evaporation during films preparation. The highest dark conductivity at room temperature of the films obtained was 1.18×104 S cm−1. The dark conductivity decreased with the increase of the ambient temperature. The highest dark electron concentration obtained was 1.59×1022 cm−3 and increased with the temperature. The mobility decreased with the temperature. The film was a polycrystalline cubic phase. We show the surface topography of the film using scanning electron microscope and scanning tunneling microscopy techniques, in order to see the growth patterns. The crystallite size was very uniform of a few μm, and the growth patterns on the grain surface were in form of terraces.
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