Heat-resistant packaging technology for wide bandgap power devices and thermal reliability testing

Abstract

SiC and GaN are attractive wide bandgap semiconductors for the new generation power devices. In order to realize the application in the market, the packaging materials, especially die-attach, has one of the key role as well as the packaging design structure. Ag sinter joining is one of the promising die-attach technologies. The advantages of Ag sintering are excellent heat-resistance, high bonding strength, high heat conductivity, easy handling capability (ambient atmosphere, low temperature and low pressure), and affordability without any nano materials.SiC die-attached made by Ag sinter joining exhibits excellent reliability in power cycling beyond 250 °C (Tj max ). Low temperature and low pressure Ag sintering utilizes its unique reaction with oxygen around 200 °C. The metallization structure both for a SiC die and for a substrate is also critical due to thermal stability and to oxidation. Some features of reliability testing methods will be mentioned in the presentation.