Abstract
Chromium zirconium nitride (Cr-Zr-N) thin films have been prepared by reactive dc closed field unbalanced magnetron co-sputtering on Si (100) wafers without external heating and voltage biasing. Heating effect on chemical composition, microstructure, and adhesion of the films by increasing in Zr sputtering current was investigated by using field emission scanning electron microscopy (FE-SEM) and energy-dispersive X-ray spectroscopy (EDX). The results suggested that heating in the film and substrate during the deposition with high Zr target current was caused by bombarding the growing film with high energetic particles. From EDX analysis, the decrease of N content could be an effect of nitrogen desorption caused by heating and bombarding of high energetic particles. FE-SEM cross-sectional morphology revealed that grain refinement by Zr addition and high atomic diffusivity on both surface and bulk by heating and bombarding of high energetic particles resulted in denser fibrous grain microstructure. However, the increase of Zr target current leaded to the film with high compressive stress and could affect the film adhesion.
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