Heat treatment-induced bond layer diffusion and re-crystallization in copper carbon interface systems measured by modulated IR radiometry

Abstract

Copper-carbon interface systems with additional Mo bond layers in the range of 25 nm to 200 nm have been analyzed with respect to their effective thermal depth profiles before and after heat treatment using modulated IR radiometry. Comparing the inverse calibrated modulated IR phase lags before and after heat treatment, several effects can be identified: – (1) The effusivity of the interface layer, which – due the contact resistance between the two elements copper and carbon – is rather low before heat treatment, increases considerably with heat treatment. – (2) This effect is accompanied by an increase of the thermal diffusion time of the interface layer, relying on the diffusion of Mo and Cu particles. – (3) The sputter-deposited copper films, which before heat treatment can be characterized as effective multi-layer structures, re-crystallize with heat treatment and show modulated IR phases, which are characteristic for thermally homogeneous thin films. – (4) The thermal diffusion times of the Cu films decrease considerably with heat treatment due to increased thermal diffusivities, and – (5) the thermal effusivities of the Cu films increase with heat treatment.