Abstract
During the process of elaboration of n+ /p InP photodiodes for solar energy conversion, we have observed that the 700 C sulfur diffusion into Zn doped InP substrates strongly modifies the electrical and photoelectrical properties of these substrates. A simple annealing at the same temperature produces nearly equivalent effects. The most relevant modification is a strong, depth independent hole density increase (more than one order of magnitude). A degradation of the photoelectrical parameters : diffusion length L and carrier lifetime 03C4 has also been detected near the surface of the heat treated substrates. The deep traps measured from deep level transient spectroscopy (DLTS) are not typical of the heat treatment.
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