Abstract
In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface metallization. Silicon carbide particles (SiCp) were added into the Ag sinter joining paste to improve the high-temperature reliability of the sintered Ag joints. The use of SiCp in the bonding structures prevented the morphological evolution of the microporous structure and maintained a stable structure after high temperature storage (HTS) tests, which reduces the risk of void formation and metallization dewetting. In addition to the Ag paste, on the side of direct bonded copper (DBC) substrates, the thermal reliability of various surface metallizations such as Ni, Ti, and Pt were also evaluated by cross-section morphology and on-resistance tests. The results indicated that Ti and Pt diffusion barrier layers played a key role in preventing interfacial degradations between sintered Ag and Cu at high temperatures. At the same time, a Ni barrier layer showed a relatively weak barrier effect due to the generation of a thin Ni oxide layer at the interface with a Ag plating layer. The changes of on-resistance indicated that Pt metallization has relatively better electrical properties compared to that of Ti and Ni. Ag metallization, which lacks barrier capability, showed severe growth in an oxide layer between Ag and Cu, however, the on-resistance showed fewer changes.
Highlights
To satisfy demands for high energy efficiency and reliability in extreme environments, wide band-gap (WBG) semiconductor materials including silicon carbide (SiC) and gallium nitride (GaN) have been adopted in power electronic systems [1,2]
It is understood that the power electronics can be significantly improved by using WBG semiconductors, due to the expectation of increasing power density, operating frequency, and break-down voltage
We have studied studied aathermostable thermostabledie-attach die-attach structure which includes stable sintered porous
Summary
To satisfy demands for high energy efficiency and reliability in extreme environments, wide band-gap (WBG) semiconductor materials including silicon carbide (SiC) and gallium nitride (GaN) have been adopted in power electronic systems [1,2]. It is understood that the power electronics can be significantly improved by using WBG semiconductors, due to the expectation of increasing power density, operating frequency, and break-down voltage. The intrinsic characteristics of WBG semiconductors allow them to be used at high temperatures (>250 ◦ C) due to their excellent electrical and physical properties [3,4,5]. Development of novel interconnection materials with high thermal and electrical conductivity and high melting temperatures is an urgent requirement for WBG semiconductors applied in severe thermal environments
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