Abstract
The insulated gate bipolar transistor (IGBT) devices often work under significantly high voltage and current, and how to reduce loss within them and prevent damage to them, caused by excessive heating must be considered in their operation. In this paper, a three-dimensional model of a single-tube IGBT device is constructed to simulate the temperature field distribution. The influence of different nanometer and micrometer thicknesses of graphene-based film (GBF) on the heat dissipation performance of IGBT devices is studied. The simulation results show that GBF placed on a chip surface, as a heat spreader, can improve the lateral heat dissipation of local hot spots, with a high heat flux, and GBF can greatly reduce the highest temperature on the chip surface. Moreover, graphene-based film of micrometer thickness provides better heat dissipation than that of nanometer thickness.
Highlights
Since graphene was successfully prepared in 2004, its unique physical properties, such as high electron mobility, high thermal conductivity, and a high Young’s modulus, have enjoyed wide applicability in the fields of electronics and photonics
In order to understand heat dissipation in graphene-based film (GBF), the temperature distribution on the chip surface was calculated in two cases: with the thickness of nanometer and micrometer GBF on the chip surface
With a thickness of 40 nm GBF placed on the chip surface, as shown in Fig. 3(b), the highest temperature drops to 215 ○C: the maximum temperature of the chip surface decreases slightly, meaning that the GBF heat spreader is moderately effective
Summary
Since graphene was successfully prepared in 2004, its unique physical properties, such as high electron mobility, high thermal conductivity, and a high Young’s modulus, have enjoyed wide applicability in the fields of electronics and photonics. The application of graphene-based film (GBF) in high-power electronic devices has attracted the attention of many research institutes.. The experimental results showed that the single-layer graphene heat spreader reduced the hot-spot temperature from 120 ○C to 108 ○C at a heat flux of 430 W/cm. Jong-Hyun Ahn et al. used single or multiple layers of graphene film on the surface of flexible devices to achieve good heat dissipation. Many scholars have used simulation methods to explore the possible application of single- or multi-layer graphene films to various practical devices to aid in, for example, the heat propagation in siliconon-insulator (SOI) circuits with graphene lateral heat spreaders, the heat dissipation in three-dimensional integrated circuits (3D IC), and the simulation of graphene heat spreaders for hot spot cooling.
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