Abstract
The insulated gate bipolar transistor (IGBT) devices often work under significantly high voltage and current, and how to reduce loss within them and prevent damage to them, caused by excessive heating must be considered in their operation. In this paper, a three-dimensional model of a single-tube IGBT device is constructed to simulate the temperature field distribution. The influence of different nanometer and micrometer thicknesses of graphene-based film (GBF) on the heat dissipation performance of IGBT devices is studied. The simulation results show that GBF placed on a chip surface, as a heat spreader, can improve the lateral heat dissipation of local hot spots, with a high heat flux, and GBF can greatly reduce the highest temperature on the chip surface. Moreover, graphene-based film of micrometer thickness provides better heat dissipation than that of nanometer thickness.
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