Abstract
We investigate the electronic heat capacity, electrical and thermal conductivity of monolayer planar and buckled silicon sheets (silicene) through tight binding approximation and Kubo-Greenwood formula. Applying and increasing dopant atoms to the system leads to opening a gap in the band structures and density of states that causes to decrease (increase) the heat capacity before (after) the Schottky anomaly. The electrical and electronic thermal conductivity of doped silicene reduces with increasing impurity strength.
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