Abstract
The radiation and thermal stability of the Schottky-barrier structures deposited by the magnetron sputtering of zirconium diboride onto the (0001) face of the Lely-grown n-6H(15R)SiC single crystals with the uncompensated-donor concentration of ∼1018 cm−3 was investigated by the methods of the I–V and C–V characteristics combined with the layer-by-layer Auger analysis. It is shown that the use of quasi-amorphous ZrB2 films when manufacturing contacts on n-6H(15R)SiC leads to no changes in the Schottky-barrier characteristics during rapid thermal annealing to 800°C in the range of 60Co γ-ray irradiation doses of 103–107 Gy.
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