Abstract
AbstractHDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18µm technology node. HDP-FSG film stability, homogeneity, and impurity content were evaluated. In addition to the development of the HDP-FSG process, integration of the interconnect module was investigated and optimized. Analysis of the AI/FSG interface integrity was tested for gap-fill and corrosion with SEM and for fluorine diffusion with SIMS. CMP rate of the FSG was determined and compared to HDP-USG. Al metallization integration approaches in conjunction with FSG were identified.
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