Abstract

This paper presents a SiGe HBT technology featuring high attractive performances devices both in terms of microwave behavior (fmax higher than 40 GHz) and low-frequency noise (1/f corner noise frequency lower than 300 Hz), through both an appropriate technology and passivation process. SiGe HBTs successfully used for the realization of ultra low phase noise microwave oscillators featuring -135 dBc/Hz at 10 kHz offset.

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