Abstract
Dry etch characteristics of polysilicon with HBr/O<TEX>$_2$</TEX> inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 <TEX>$\AA$</TEX>/min, which meets with the mass production for devices. The wafer level etch uniformity was within <TEX>$\pm$</TEX>5 ％. Etch profile showed 90<TEX>$^{\circ}$</TEX> slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on <TEX>$O_2$</TEX> flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl<TEX>$_2$</TEX>-RIE.
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