Abstract
In this letter, we study the low-frequency noise behavior of RESET-state Phase-Change Memory (PCM) devices belonging to a 45-nm technology node. Furthermore, by dealing with a typical case study, we calculate the fluctuation of the cell readout current induced by <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{1}/f$</tex></formula> noise and provide predictions for estimating its effect in RESET-state PCM of future technology nodes.
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