H-band down-conversion and up-conversion mixers with wide IF bandwidth

Abstract

This paper presents H-band down-conversion and up-conversion mixers implemented in a 250-nm InP double heterojunction bipolar transistor technology. The mixers are aimed to achieve a wide IF bandwidth and high conversion gain for high-speed wireless communication. The- mixer core employs a Gilbert cell pumped by a fundamental LO signal, leading to high conversion gain and high isolation. To achieve a wide IF bandwidth, the inductive-peaking, Cherry-Hooper, and staggered-tuned techniques are used at IF output of the down-conversion mixer. The down- and up-conversion mixers exhibit measured conversion gain of 7.5 and −5.2 dB with 3-dB SSB IF bandwidth of 20 and 25 GHz at LO frequency of 270 and 280 GHz, respectively.