Abstract
AbstractThe second harmonic generation efficiency has been calculated in a number of II‐VI‐compound semiconductors under high‐field condition by approximating the velocity‐field characteristics by a power‐series relation. It is found that the second harmonic generation efficiency is much higher in these materials than in the elemental or IIIV compound semiconductors. Also, because the carrier relaxation times are lower in these materials, they can be used for efficient harmonic power generation in the infrared‐ and millimeter‐wavelength ranges.
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