Hard X-ray photoelectron spectroscopy on ultra shallow plasma-doped silicon layers

Abstract

Recently, we have shown that hard X‐ray photoemission spectroscopy (HX‐PES) using undulator X‐rays at SPring‐8 is quite feasible with both high resolution and high throughput. Here we report an application of HX‐PES to the characterization of electronic and chemical states of ultra shallow plasma doped samples. We found that the shift in chemical binding energy by impurity activation can be measured with high accuracy. The binding energy of Si 1s changes according to the shift in Fermi level as the carrier concentration varies. Thus, the active carrier concentration of ultra‐shallow junction region can be measured by non‐destructive HX‐PES with high accuracy.