Abstract
This paper discusses specific problems encountered in characterizing and analyzing the neutron degradation of operational amplifiers and shows that hand analysis can be used to relate the terminal parameters to the gain of internal transistors. The LM-108 op-amp is used to demonstrate the applicability of circuit analysis techniques to the neutron degradation problem. This device was chosen because it is widely used in military applications, contains four basic bipolar transistor structures, and is more sensitive to neutron damage than devices with lower input impedance and higher operating currents. This device also exhibits a wider range of neutron sensitivity than many other op-amps, and employs complex internal circuitry.
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