Abstract
The influence of magnetic induction on the noise voltage between two point electrodes in a homogeneous semiconductor has been investigated both theoretically and experimentally. Relations are derived, assuming that the conductivity fluctuations are caused either by mobility fluctuations or by free carrier density fluctuations. The theoretical results are compared with experimental results of 1/f noise in germanium. Using Hall-effect noise, one cannot discriminate between mobility and number fluctuations.
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