Abstract
We have analyzed Hall mobilities and photoluminescence (PL) spectra of carbon(C)-doped GaAs epilayers as a function of hole concentration and temperature. We have obtained an empirical relation of hole concentration dependent Hall mobility appropriate for C-doped GaAs which have higher Hall mobilities than Zn-doped GaAs. By PL measurement, temperature dependence of band gap energy E g and PL peak energy E M shift of C-doped GaAs with a hole concentration of 9.2 × 10 19 cm -3 have been measured. The resulting E g and E M at 0 K are (1.420 ± 0.003) eV and (1.458 ± 0.003) eV, respectively. The PL peak energy of C-doped GaAs with hole concentrations varying from 1 × 10 17 to 9.2 × 10 19 cm -3 have been measured and compared with previously reported data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
