Hall mobility and temperature dependent photoluminescence of carbon-doped GaAs

Abstract

We have analyzed Hall mobilities and photoluminescence (PL) spectra of carbon(C)-doped GaAs epilayers as a function of hole concentration and temperature. We have obtained an empirical relation of hole concentration dependent Hall mobility appropriate for C-doped GaAs which have higher Hall mobilities than Zn-doped GaAs. By PL measurement, temperature dependence of band gap energy E g and PL peak energy E M shift of C-doped GaAs with a hole concentration of 9.2 × 10 19 cm -3 have been measured. The resulting E g and E M at 0 K are (1.420 ± 0.003) eV and (1.458 ± 0.003) eV, respectively. The PL peak energy of C-doped GaAs with hole concentrations varying from 1 × 10 17 to 9.2 × 10 19 cm -3 have been measured and compared with previously reported data.