Hall measurements of n-indium arsenide MBE-deposited layers: Relevance to device processing and applications

Abstract

This paper addresses the observed difference between the measured and theoretically computed concentration, resistivity and mobility for an n-InAs sample. This difference is a problem for measurements made during InAs device processing. The current literature does not provide a sufficient explanation of the problem, which appears only at temperatures lower than ~100K. Nevertheless, it limits the use of semiconductor devices in new applications. We have previously suggested that the responsibility for such behavior may lie with an element, which functions as a donor at low temperatures and as an acceptor at higher temperatures.Another problem arises from using Hall potential measurements to obtain the concentration, mobility and resistivity of intentionally undoped n-InAs MBE layers. The experimental data show a dependence of the obtained results on the magnetic field strength. The experimental data agree with the computational values only at 0.6T in the range of ~100–300K. The purpose of this paper is to show how to obtain proper results for the conduction parameters of InAs using Hall voltage measurements.