Abstract
Recently, increases of the surface potential in n-type epitaxial GaAs after NH4OH treatment studied using Hall-effect measurements, were reported. In this work, complementary results for p-type samples show decreases in band bending, again in agreement with the predictions of the advanced unified defect (AUD) model for the surface-interface states. From this and other data, a working mathematical model based on the AUD model is developed. Probable values for its parameters are determined which suggest a physically reasonable mechanism to explain the surface-potential changes.
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