Abstract
The Hall coefficient of magnetogranulated p-Cd1 − xMnxGeAs2 (x = 0.18 and 0.3) semiconductor-ferromagnetic structures has been measured at high hydrostatic pressures of up to p = 7 GPa. Semiconductor-metal transitions have been identified and investigated using resistivity and Hall coefficient versus pressure data. Normal and anomalous contributions to the Hall coefficient have been evaluated from magnetic-field dependences of the Hall resistance in magnetic fields H ≤ 0.5 T at temperatures in the range T = 77–400 K. The pressure of the ferromagnetic-paramagnetic phase transition in the materials has been determined from anomalous Hall resistance hysteresis loops.
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