Abstract
Here, we present the electrical properties of the compound Cu3BiS3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 10 16 cm -3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm 2 V -1 s -1 ) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu3BiS3 compound.
Highlights
I-III-VI2 chalcopyrite compounds are direct gap semiconductors and have adequate properties for use in the fabrication of single-junction cells or tandem cells (Repins et al 2008, Kayes et al 2011, Choi et al 2012, Seo et al 2012)
HRTEM images of medium and high magnification measured in a specific area of Cu3BiS3 thin films, show that this compound grows in a nanocrystalline lattice, with grains of different size, whose average value is in the vicinity of 15 nm (Mesa et al 2012)
Transient surface photovoltage (SPV) curves were obtained with Cu3BiS3 thin films and with Cu3BiS3/In2S3
Summary
I-III-VI2 chalcopyrite compounds are direct gap semiconductors and have adequate properties for use in the fabrication of single-junction cells or tandem cells (Repins et al 2008, Kayes et al 2011, Choi et al 2012, Seo et al 2012). The maximum conversion efficiency reported up to date for single-junction thin film technology solar cells was obtained by fabricating the device using Cu-III-VI2 group compounds as the absorbing layer (Contreras et al 2009, Green et al 2012). These solar modules which are based on a thin film of Cu (InGa)Se2 (CIGS) offer greater stability and price competitiveness for production processes. As a result of this study the layers presented p-type conductivity (~0.03 Ω-1cm-1) and an energy gap
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