Abstract
The electrical conductivity ρ and Hall coefficient RH are measured on a n-type CuInSe2 sample that has dopant concentration n below critical concentration nc of the metal-insulator transition. Mott type variable range hopping conduction of between 4 and 20 K is observed at several fixed magnetic fields B up to 1.5 T. The effect of the magnetic field on Hall coefficient and Hall mobility μH is also studied. It is found that temperature dependence of μH is in agreement with the Hall effect theory for hopping conduction.
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