Abstract
Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 × 1019 cm−3, the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 × 1017 cm−3 and 9.1 cm2 V−1 s−1, respectively, at room temperature. The Mg acceptor level was 232 ± 15 meV, which is in good agreement with the previous report.
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