Abstract
$\alpha$ -Ga 2 O 3 is an ultra-wide bandgap semiconductor promising for power device applications. In order to exploit the full potential of the material and to realize high-performance devices, we need to establish an epitaxial growth technique which enables the growth of high-quality epilayers at high growth rate. Accordingly, we have investigated the halide vapor phase epitaxy (HVPE) of $\alpha$ -Ga 2 O 3 . In this paper, we report state-of-the-art HVPE technologies for $\alpha$ -Ga 2 O 3 , mainly on the growth characteristics, doping control, and dislocation reduction.
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