Abstract
The response of an oxide crystal to the atmosphere can be personified as breathing-a dynamic equilibrium between O2 gas and O2- anions in the solid. We characterize the analogous defect reaction in an iodide double-perovskite semiconductor, Cs2SnI6. Here, I2 gas is released from the crystal at room temperature, forming iodine vacancies. The iodine vacancy defect is a shallow electron donor and is therefore ionized at room temperature; thus, the loss of I2 is accompanied by spontaneous n-type self-doping. Conversely, at high I2 pressures, I2 gas is resorbed by the perovskite, consuming excess electrons as I2 is converted to 2I-. Halide mobility and irreversible halide loss or exchange reactions have been studied extensively in halide perovskites. However, the reversible exchange equilibrium between iodide and iodine [2I-(s) ↔ I2(g) + 2e-] described here has often been overlooked in prior studies, though it is likely general to halide perovskites and operative near room temperature, even in the dark. An analysis of the 2I-(s)/I2(g) equilibrium thermodynamics and related transport kinetics in single crystals of Cs2SnI6 therefore provides insight toward achieving stable composition and electronic properties in the large family of iodide perovskite semiconductors.
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