Half-metallicity in [formula omitted] and V doped tin-carbide SnC

Abstract

Electronic and magnetic properties of V and Mn doping SnC are investigated in this work. The ab-initio structure calculation based on the Korring-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA) have been used. We have found that the substitution of Sn atoms in Tin-Carbide by Mn and V Transition Metals brings a half-metallic ferromagnetic character with a double exchange mechanism. The partial moments of impurities in the compound varies slightly from 1.11 to 1.09 μB in V case and 3.56 to 3.5 μB for Mn case. While the polarization is found to be equal 100%, in both cases where the up-spins channel is conductive, while the down channel is insulating. Using the Vegard's law, we have determined the laticce parameter of the doping compounds as function of the impurities concentrations. Such features has a significant implications for the performance of spintronic instruments and boosts their magnetoresistance ability at an enormous rate. Hence, the critical temperature can be controlled by varying the concentration of impurities.