Abstract
Successful fabrication and characterisation of a vacuum microelectronic half-wave rectifier and envelope detector using a 2000-fingered nanodiamond lateral field emitter diode with 4 µm inter-electrode spacing is reported. The electrical characterisation demonstrates low turn-on field (∼1.4 V/µm) and high emission current, verified by the Flower-Nordheim plot. The diode is then connected in appropriate circuits to realise half-wave rectification and envelope detection. This approach demonstrates a new way of developing temperature- and radiation-tolerant integrated microelectronics.
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