Abstract
The electronic structure and the ferromagnetism of V- and Cr-doped zinc-blende semiconductor CdTe have been investigated by spin-polarized calculations with first-principles plane-wave pseudopotential method within the generalized gradient approximation for the exchange-correlation potential. We find that the V- and Cr-doped zinc-blende CdTe show half-metallic behavior with a total magnetic moment of 3.0 and 4.0μ B per supercell, respectively. It may be useful in semiconductor spintronics and other applications.
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