Abstract
We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (1 0 0) Si. The film was then exposed to UV radiation while in an O 2 ambient. Hafnium silicate films are obtained with no detectable SiO x interfacial layer as characterized by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy.
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