Abstract
H2S gas sensing characteristics of a polysilicon control-gate (CG) FET-type gas sensor are investigated. The 15 nm thick In2O3 deposited using a radio frequency magnetron sputtering method is used as the sensing material. The metal CG is modified to poly-silicon CG, and the gas sensor with polysilicon control-gate operates well without any problems. The modified FET-type gas sensor has two CG terminals (VCG1 and VCG2), and the gas sensor with opened VCG2 shows better gas sensing characteristics by means of higher transconductance (gm) than gas sensor with grounded VCG2. H2S gas sensing characteristics are examined while varying the operating temperature, the concentration of the H2S gas, and the pre-bias voltage (Vpre). The sensing mechanism for detecting the H2S gas in an FET-type gas sensor is examined. The polysilicon control-gate FET-type gas sensor is able to detect up to 5 ppm of H2S gas. The FET-type gas sensor shows significantly improved gas response by using the pre-bias scheme.
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