H2S DETECTION BY CuO NANOWIRES AT ROOM TEMPERATURE

Abstract

Room temperature gas sensing properties of CuO nanowires synthesized by thermal oxidation of copper foils was studied in different configurations: (i) isolated nanowires aligned between two electrodes, (ii) as grown CuO foil consisting of nanowires and (iii) CuO nanowire films. Sensors were studied for response to different gases. Different sensors showed qualitatively different response on exposure to H2S . Isolated nanowires showed high sensitivity, (~200% for 10 ppm of gas) and fast response (30 s) and recovery times (60 s). In these samples, the resistance mainly decreased on exposure to H2S (though a small initial increase was observed). In CuO foils, resistance increased for low concentrations (5–10 ppm) but decreased at high concentrations. In the case of CuO nanowire films, resistance only increased on exposure of H2S (upto 400 ppm). Since CuO is a p-type semiconductor, on exposure to H2S an increase in resistance is expected due to oxygen adsorption related process. Decrease in resistance in some of the sensors was understood in terms of reaction of CuO with H2S resulting in the formation of CuS .