Abstract
Large-scale desired silicon nanowires without amorphous silicon oxide sheath have been synthesized by thermal chemical vapor deposition using SiH4 gas at 650°C in a flow mixture of H2 and N2, compared with the short and thick Si nanowires with amorphous SiOx coating obtained in N2. Scanning electron microscopy (SEM), Energy dispersive X-ray spectrometry (EDX) analysis, and high-resolution transmission electron microscopy (HRTEM) have been employed to characterize the Si nanowires. The effects of H2 gas on the catalytic particle size and on the formation of Si nanowires are discussed in detail. Photoluminescence (PL) characteristics further demonstrate the large differences between the H2-assisted grown Si nanowires and the Si nanowires grown in N2.
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