Abstract
Phosphorus-doped hydrogenated silicon nitride (SiNx:H) thin films containing crystalline silicon quantum dot (c-Si QD) was prepared by plasma enhanced chemical vapor deposition (PECVD) using hydrogen-argon mixed dilution. The effects of H2/Ar flow ratio on the structural, electrical and optical characteristics of as-grown P-doped SiNx:H thin films were systematically investigated. Experimental results show that crystallization is promoted by increasing the H2/Ar flow ratio in dilution, while the N/Si atomic ratio is higher for thin film deposited with argon-rich dilution. As the H2/Ar flow ratio varies from 100/100 to 200/0, the samples exhibit excellent conductivity owing to the large volume fraction of c-Si QDs and effective P-doping. By adjusting the H2/Ar ratio to 100/100, P-doped SiNx:H thin film containing tiny and densely distributed c-Si QDs can be obtained. It simultaneously possesses wide optical band gap and high dark conductivity. Finally, detailed discussion has been made to analyze the influence of H2-Ar mixed dilution on the properties of P-doped SiNx:H thin films.
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