Abstract
Reliability characterization of SiC devices is an ongoing activity. For this work, 650 V SiC JBS diodes in TO247 housings were tested in H3TRB. After a test period of 4000 hours none of the devices had failed during the test and only two out of sixteen devices had failed during blocking curve measurements performed at intermediate time steps. This is significantly better performance than many silicon devices offer today. The failure spots of the failed devices were detected at the edge of the main junction appearing as semi-circular cavities in the aluminum metallization. All other devices did not even show deviations from their original blocking curves.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
