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Abstract
We report on the observation of a very strong, broad and asymmetric H-band photoluminescence (PL) spectrum in silica δ-doped p-type Al0.35Ga0.65As–GaAs heterojunctions (SHs). Doping type (n- or p-type) dramatically changes the H-band PL emission. When optical excitation intensity increases by two orders of magnitude, a redshift of H-band in the δ-doped p-type SH is as large as 27meV. The results of self-consistent calculation of coupled Schrödinger and Poisson equations and PL analysis indicate that the H-band originates from effective band-gap renormalization due to two-dimensional hole-gas.
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