Abstract
In this study, the optical Tamm state is excited for the first time using gyroidal graphene/porous silicon one-dimensional photonic crystal terminated by a gyroidal graphene layer. The gyroidal graphene and porous silicon are used to enhance the figure of merit and sensitivity of the based Tamm resonance photonic crystal sensor. By tuning different parameters like the angle of incidence, the thickness of the sample layer, and the thickness of the gyroidal graphene layer, we have reached the optimized sensor. The observation of resonant dips in the reflectance spectra is strong evidence that Tamm plasmon-polaritons exist with higher sensitivity (188.8 THz/RIU) and figure of merit (355,384 RIU−1) than previously reported structures. The proposed sensor recorded sensitivity and FoM higher 38% and 747% respectively than a similar structure composed of graphene sheets and porous silicon.
Highlights
In this study, the optical Tamm state is excited for the first time using gyroidal graphene/porous silicon one-dimensional photonic crystal terminated by a gyroidal graphene layer
By adding the GGr2 layer as a plasmonic layer, the Tamm plasmon-polariton (TPP) dip appears inside the frequency range of the photonic bandgap (PBG) at 20.45 THz and 4.8% reflectance
Appearing of TPP dip is due to the trapping of light at the interface as a result of the PBG in the porous silicon PC (PSi-PC) and strong attenuation of electromagnetic waves in graphene
Summary
The optical Tamm state is excited for the first time using gyroidal graphene/porous silicon one-dimensional photonic crystal terminated by a gyroidal graphene layer. By adding the GGr2 layer as a plasmonic layer, the TPP dip appears inside the frequency range of the PBG at 20.45 THz and 4.8% reflectance.
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