Abstract
An analytical model for single and double heterojunction bipolar transistors has been developed by employing the concepts of the Gummel-Poon model. The equations for injected minority carrier concentrations are developed based on the thermionic diffusion theory. Linking current and total charges in the base are calculated. The Early voltages are treated as functions of the applied voltages rather than as constants. Tunnelling effect has been considered for abrupt heterojunctions. The resemblance of this model with the SPICE BJT model makes it easy to implement it in SPICE.
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