Guidelines for a highly efficient CuI/n-Si heterojunction solar cell

Abstract

We report the simulation outcomes of a highly efficient CuI/n-Si heterojunction solar cell (HJSC) by SCAPS-1D simulator using the parameters obtained from spin-coated CuI thin film characterizations. The influence of thickness and doping concentration of Si substrate as well as CuI hole transport layer (HTL) on the photovoltaic (PV) parameters and built-in potential has been explored. The optimum values of the solar cell parameters are presented to attain the best result. The highest power conversion efficiency (PCE) of 22.62% with J SC of 37.25 mA cm−2, V OC of 0.716 V and FF of 84.69% has been achieved with a 200 μm thick Si substrate and 50 nm thick CuI thin film, respectively. Finally, the resistance dependent PV performance has been investigated for the solar cell. These findings indicate that highly efficient CuI/n-Si HJSC can be designed and this can be a potential candidate compared to the organic/Si HJSC counterpart.