Abstract
The calculation of spontaneous electroluminescence from GaInAsP active layer and the spectral modification of emitted radiation, due to the propagation towards the edge of GaInAsP/InP heterostructure diode is presented. By using the exact solution of lossy dielectric waveguiding structure, the gain/absorption coefficients calculated for relevant layers of the heterostructure have been transformed into effective absorption coefficients assigned to guided modes. The observed double-peak spectra are interpreted in terms of fundamental and higher-order guided modes.
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