Abstract
It is my sincere pleasure and honor to introduce the eighth Special Issue of the IEEE Transactions on Electron Devices on Solid-State Image Sensors. Previous special issues were published in February 1976, August 1985, May 1991, October 1997, January 2003, November 2009, and January 2016. In the six years since the last Special Issue, solid-state image sensors have continued to demonstrate impressive performance improvements and developments in a diverse set of technology areas. The areas include process modules, wafer-level stacking, single-photon counting, ultra-wide dynamic range, alternate detector materials, time-of-flight 3-D imaging, and device simulation. Solid-state image sensors also achieved continued growth in existing markets such as camera phones, automotive cameras, security and industrial cameras and medical/scientific cameras. New applications and markets, such as the Internet-of-Things, 3-D imaging, artificial intelligence, augmented reality, biometrics, and others, are driving further growth and technology development. Solid-state image sensors are now key components in a vast array of consumer and industrial products.
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