Abstract

We propose a new guard ring geometry for n-on-p silicon particle detectors for high luminosity applications. The performance of the guard ring structure is evaluated with simulations up to a radiation fluence of 1 x 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> n <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eq</sub> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> using an existing three level trap model for p-type FZ silicon. The post-irradiation performance improvement of guard rings with floating field plates pointing towards the sensitive region is demonstrated. The breakdown behavior of the guard ring structure is studied as a function of oxide charge, field plate length, and oxide thickness.

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