Abstract
The GSMBE growth of GaInAsP/InP 1.3-μm-TM active core and highly p-doped contacting layers required for fabricating an integrated optical waveguide isolator is studied in detail. The deposition of a highly doped 1.17-μm-GaInAsP:Be contacting layers provide a good electrical contact between the III–V semiconductor and the ferromagnetic metal is reported. The GSMBE growth of strain-compensated GaInAsP multiple-quantum wells (QWs) allows one to stack up to fifteen 12-nm-thick −1.1% tensile-strained QWs. Broad area TM-lasers with threshold a current density of 0.8k A/cm 2 and characteristic temperature of 75 K (in the range of 20–80 °C) are obtained for 600 μm-long lasers comprising 6 QWs. The possible wavelength extension of TM lasers to 1.55-μm is also discussed.
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