Abstract
We present the numerical analysis of the growth of a silicon (Si) single crystal. In the MCZ (Magnetic-field-applied Czochralski) method, two magnetic fields that stand opposite to each other generate a cusp magnetic field. In this work, the three cusp magnetic fields used for the analysis are an external magnetic field, a surface magnetic field and an internal magnetic field. Each case was evaluated mainly as to the degree of stirring, shaft symmetry and the stability of the flow. As a result , the cusp magnetic field that yielded to best conditions was the internal magnetic field.
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