Growth temperature effect on a self-assembled SiC nanostructure

Abstract

Self-assembled nanostructure fabrication technology holds much potential to further the interests of nanoscience and nanotechnology. Using a low-energy mass-selected ion beam deposition system, we fabricated self-assembled silicon carbide (SiC) nanotiles. Methylsilicenium ions (SiCH 3 +) used as single precursors were generated from dimethylsilane (SiH 2(CH 3) 2). Low-energy SiCH 3 + ions (100 eV) were deposited on a Si(100) substrate at 500–600 °C. The characteristics of the self-assembled SiC nanotiles were analyzed by reflection high-energy electron diffraction (RHEED), a scanning electron microscope (SEM) and an atomic force microscope (AFM). The self-assembled SiC nanostructure displayed the properties of a zinc-blende structure (3C–SiC) and heteroepitaxial growth. The shape of the self-assembled SiC nanotiles was rectangular with an edge length of 150–200 nm and a height of 10–30 nm. Optimum temperature was found to be 600 °C due to the sensitivity of crystal quality and shape of the self-assembled SiC nanotiles to growth temperature.