Growth temperature dependences of InN films grown by MOCVD

Abstract

We investigate the growth temperature dependences of InN films grown by metal organic chemical vapor deposition (MOCVD). Experimental results indicate that growth temperature has a strong effect on the surface morphology, crystalline quality and electrical properties of the InN layer. The increasing growth temperature broadened the ω scan’s full-width at half-maximum (FWHM) and roughened the surface morphology; whereas the electrical properties improved: As the temperature increased from 460 °C to 560 °C, room-temperature Hall mobility increased from 98 cm 2/V s to nearly 800 cm 2/V s and carrier concentration dropped from 5.29 × 10 19 cm −3 to 0.93 × 10 19 cm −3. The higher growth temperature resulted in more efficient cracking of NH 3, which improved Hall mobility and decreased carrier concentration.