Abstract
The formation of different types of twins were observed in SiGe/graded buffer/Si(110) heterostructures grown at different substrate temperatures using gas-source molecular beam epitaxy. It was found that the growth twins were dominant when the substrate temperature was lower than 700 °C. The growth at higher substrate temperature effectively suppressed the nucleation of growth twins and resulted in the formation of another type of defect, microtwin lamellas, which accompany the strain-relaxation process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
